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inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor 2SK1971 description drain current C i d =35a@ t c =25 drain source voltage- : v dss = 500v(min) fast switching speed applications suitable for switching regulator absolute maximum ratings(t a =25 ) symbol arameter value unit v dss drain-source voltage (v gs =0) 500 v v gs gate-source voltage 30 v i d drain current-continuous@ tc=25 35 a p tot total dissipation@tc=25 200 w t j max. operating junction temperature 150 t stg storage temperature range -55~150 pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor 2SK1971 electrical characteristics (t c =25 ) symbol parameter conditions min type max unit v (br)dss drain-source breakdown voltage v gs = 0; i d = 10ma 500 v v (br)gss gate-source breakdown voltage v ds = 0; i g = 100 a 20 v v gs (th ) gate threshold voltage v ds = 10v; i d =1ma 2 3 v v df body to drain diode forward voltage i f = 35a, v gs = 0 1.1 v r ds( on ) drain-source on-resistance v gs = 10v; i d = 18a 0.19 0.23 i gss gate-body leakage current v gs = 25v;v ds = 0 10 a i dss zero gate voltage drain current v ds = 400v; v gs = 0 250 a ciss input capacitance v ds =10v;v gs =0v; f t =1mhz 4320 pf crss reverse transfer capacitance 130 coss output capacitance 1120 tr rise time v gs =10v;i d =5a; v dd =200v; r l =6 170 ns ton turn-on time 50 tf fall time 130 toff turn-off time 320 pdf pdffactory pro www.fineprint.cn |
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